Dr Binsu J Kailath
Assistant Professor of Electrical Engineering
IIITD&M Kancheepuram IIT Madras Campus Chennai 600 036 India +91-44-22578555 Ext - 26 bkailath@iiitdm.ac.in |
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| Research Interest | |||
| 1. Semiconductor Device Physics 2. MOS Device Modeling and Technology 3. Alternate Substrates and high-k dielectrics for ULSI MOS 4. MEMS |
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| Education | |||
| Ph D - IIT Madras | |||
| Professional Experience | |||
| Research - 5 YEARS Teaching - 11 YEARS |
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| Most recently published papers | |||
| 2007 | |||
1. Binsu J Kailath, Nandita DasGupta and Amitava DasGupta "Optimization of ac anodization parameters for the improvement of electrical properties of thermally grown ultrathin gate oxide", Solid State Electronics, Vol. 51, No. 5, May 2007, pp 762-770. 2. Binsu J Kailath, Amitava DasGupta and Nandita DasGupta, "Electrical And Reliability Characteristics of MOS Devices with ultrathin SIO2 grown In nitric acid solutions," IEEE Transactions on Device and Material Reliability, Vol. 7, No. 4, 2007, pp 602-610. 3. Binsu J Kailath, Nandita DasGupta and Amitava DasGupta, "Improved Electrical Characteristics of MOS devices with gate oxide grown by chemical oxidation" Transactions of Electro Chemical Society, Vol. 8, No.1, 2007, pp 105-110. |
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| 2006 | |||
1. Binsu J Kailath, Nandita DasGupta and Amitava DasGupta, "Improved Electrical Characteristics by anodic oxidation with superimposed dc and ac voltages" IETE Journal of Research, Vol. 5, No.5, Sept-Oct, 2006, pp 357-363. |
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| Recent Conference | |||
| 2007 | |||
1. Binsu J Kailath, S. Bhattacharya, Amitava DasGupta, Nandita DasGupta, D.W. McNeill and H.Gamble, "Effect of Nitridation on Al/HfO2/Ge MIS Capacitors," Proceedings of the 13th International Workshop on Physics of Semiconductor Devices (IWPSD), IIT Bombay, India, December 16- 20, pp 194-197, 2007. 2. Binsu J Kailath, Nandita DasGupta and Amitava DasGupta, "Improved Electrical Characteristics of MOS devices with gate oxide grown by chemical oxidation" International Conference (Engineering Conferences International) on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, Barga, Italy, July 28 - August 3, 2007. 3. Binsu J.Kailath, Amitava DasGupta, Nandita DasGupta, S Bhattacharya, B. M. Armstrong H. S. Gamble and J McCarthy, "Novel low temperature techniques for growth of ultrathin oxides for Strained Si MOS Devices," 19th IEEE International Conference on Microelectronics (ICM), Cairo, Egypt, December 29- 31, 2007 |
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| 2006 | |||
1. Binsu J Kailath, Nandita DasGupta and Amitava DasGupta "Improved Reliability Characteristics for thermally grown ultrathin gate oxide by optimized anodic oxidation" Proceedings of the International Conference on Reliability and Safety Engineering, Chennai, India, December 18-20, 2006, pp 508-514. 2. Binsu J Kailath, Vaibhav G Marathe, Nandita DasGupta, and Amitava DasGupta "Studies on Chemical oxidation of Silicon with Nitric Acid" Proceedings of the 13th International Workshop on Physics of Semiconductor Devices (IWPSD), National Physical Laboratory, New Delhi, India, December 17-22, 2005, pp 701-704. 3. Binsu J Kailath, Nandita DasGupta, Amitava DasGupta, S. Bhattacharya, B. M. Armstrong, H.S. Gamble, Pankaj Misra and Lalit M Kukreja, "Electrical Characterisation of Al/SiO2-TiO2/Strained Si/Relaxed SiGe MTOS Capacitors" International Conference on MEMS and Nanotechnology, IIT Kharagpur,India, December 21-24, 2005. |
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| Memberships in professional societies | |||
| Life Member, ISTE |
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