Dr Manoharan M
Visiting Assistant Professor of Electrical Engineering
IIITD&M Kancheepuram |
 |
||
| Research Interest | |||
| 1. Nanofabrication 2. Silicon Nanoelectronics 3. Cryogenic and RF Measurements |
|||
| Education | |||
| Ph D (Tokyo Institute of Technology) | |||
| Professional Experience | |||
| 4 years (Teaching) 3 years (Research) |
|||
| Areas of Expertise | |||
1. Nanofabrication, Thin film growth, Material Characterization. 2. Semiconductor device room temperature and cryogenic measurements and Microwave measurement. |
|||
| Most recently published papers | |||
| 2008 | |||
1. M. Manoharan, Shunri Oda, and Hiroshi Mizuta “SOI-based radio-frequency single-electron transistors operating at temperatures above 4.2 K”, Nano Lett., 8 (12), 4648-4652 (2008). 2. M. Manoharan, Yoshishige Tsuchiya, Shunri Oda, and Hiroshi Mizuta “Impact of channel constrictions on the formation of multiple tunnel junctions in heavily-doped silicon SETs”, Appl. Phys. Lett., 93, 112107 (2008). 3. M. Manoharan, Benjamin Pruvost, Hiroshi Mizuta, and Shunri Oda “Impact of key circuit parameters on signal-to-noise ratio characteristics for the radio-frequency single electron transistors”, IEEE Trans Nanotechnology 7, 266, (2008). 4. M. Manoharan, Yoshiyuki Kawata, Yoshishige Tsuchiya, Shunri Oda, and Hiroshi Mizuta “Stronglycoupled multiple-dot characteristics in dual recess structured silicon channel”, J. Appl. Phys. 103, 043719 (2008). 5. M. Manoharan, Yoshishige Tsuchiya, Shunri Oda, and Hiroshi Mizuta “Stochastic Coulomb blockade in coupled asymmetric silicon dots formed by pattern-dependent oxidation”, Appl. Phys. Lett. 92, 092110 (2008). (This paper was also selected by the Virtual Journal of Nanoscale Science and Technology) |
|||
| Recent Conference | |||
| 2008 | |||
1. M. Manoharan, Y. Tsuchiya S. Oda and H. Mizuta “Silicon radio frequency single-electron transistors operating at above 4.2 K”, International Conference on Solid State Devices and Materials, 5435, 2008, Ibaraki. 2. M. Manoharan, Y. Tsuchiya S. Oda and H. Mizuta “Is it possible to avoid uncontrolled multiple tunnel junctions induced by random dopants in heavily-doped silicon single-electron transistors?”, IEEE silicon nanoelectronics workshop, P1-22, 2008, Hawaii. 3. J. Ogi, M. Manoharan, Y. Tsuchiya S. Oda and H. Mizuta “Anomalous suppression of single-electron tunnelling observed for Si nanobridge transistors with a suspended quantum dot cavity”, IEEE silicon nanoelectronics workshop, P1-27, 2008, Hawaii. 4. Gento Yamahata, Yoshiyuki Kawata, M. Manoharan, Shunri Oda, Yoshishige Tsuchiya, and Hiroshi Mizuta, “Silicon-based Quantum Information Devices”, The forth International Nanotechnology Conference on Communication and Cooperation, P-12, 2008, Tokyo. 5. M. Manoharan, Y. Tsuchiya, S. Oda and H. Mizuta “Operation of SOI-based radio-frequency single electron transistor above 4.2 K”, JSAP 69th autumn meeting, 5a-E-4, 2008, Aichi. |
|||
| 2007 | |||
1. M. Manoharan, Yoshiyuki Kawata, Yoshishige Tsuchiya, Hiroshi Mizuta, and Shunri Oda, “Observation of strongly-coupled multiple-dot characteristics in the dual recess structured silicon channel with different oxidation conditions”, Silicon Nanoelectronics Workshop, 4-62, 2007, Kyoto. 2. Yoshiyuki Kawata, M. Manoharan, Yoshishige Tsuchiya, Hiroshi Mizuta, and Shunri Oda, “Fabrication and Characterization of Double Single-Electron Transistors as a Readout for Charge Qubits”, Silicon Nanoelectronics Workshop, 4-46, 2007, Kyoto. 3. M. Manoharan, Yoshiyuki Kawata, M. Khalafalla, Y. Tsuchiya, Hiroshi Mizuta, and Shunri Oda “Formation of strongly-coupled multiple-dot in the dual recess structured silicon channel”, JSAP 68th autumn meeting, 8p-ZL-5, 2007, Hokkaido. |
|||
| 2006 | |||
1. M. Manoharan, Hiroshi Mizuta, and Shunri Oda, “Hybrid simulation of the RF-SET and its sensitivity analysis”, International Conference on Solid State Devices and Materials, 5152, 2006,Yokohama. 2. M. Manoharan, Yoshiyuki Kawata, Yoshishige Tsuchiya, Kouichi Usami, Hiroshi Mizuta, and Shunri Oda, “A study on operation of silicon single electron devices in high frequency regime”, 21st Century COE Photonics nanodevices symposium, P-36, 2006, Tokyo. 3. M. Manoharan, Yoshiyuki Kawata, Hiroshi Mizuta, and Shunri Oda “Multiple gates silicon SET with tunable tunnel barrier for RF-SET applications”, JSAP 67th autumn meeting, 29a-ZR-8, 2006, Kyoto. 4. M. Manoharan, Hiroshi Mizuta, and Shunri Oda, “Optimization of RF-SET sensitivity by using SETSpice hybrid simulation”, JSAP 53rd Spring meeting, 24p-X-1, 2006, Tokyo. |
|||